Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Photonic crystals
HL 44.2: Vortrag
Dienstag, 12. März 2013, 15:15–15:30, H3
Design, Fabrication and Characterization of High-Q Photonic Crystal Cavities in SiN — •Michael Adler1, Carlo Barth1, Jürgen Probst2, Max Schoengen2, Bernd Löchel2, Janik Wolters1, and Oliver Benson1 — 1Nano-Optics, Institute of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany — 2Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Nanometeroptik und Technologie (G-INT), Albert-Einstein-Straße. 15, D-12489 Berlin
Two-dimensional photonic crystal (PC) cavities combine a high quality factor (Q) with a low mode volume. Recently heterostructure cavities with extremely high quality factors operating in the infrared have been realized based on silicon [1]. Our results from finite-difference time-domain (FDTD) simulations prove that high-Q PCs for the visible spectral range can be realized using silicon nitride. First experiments on the realization of such structures are presented.
[1] E. Kuramochi, M. Notomi, S. Mitsugi, A. Shinya, T. Tanabe, T. Watanabe . Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect. Applied Physics Letters 88, 041112 (2006)