Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 52: Graphene: Characterization and devices (HL, jointly with MA, O, TT)

HL 52.13: Vortrag

Mittwoch, 13. März 2013, 12:45–13:00, H17

Exploring the electronic performance of graphene FETs for bio-sensing — •Lucas Hess, Benno Blaschke, Max Seifert, and Jose Garrido — Walter Schottky Institut, TU München

For medical applications such as neuroprostheses and for fundamental research on neuronal communication, it is of utmost importance to develop a new generation of electronic devices which can effectively detect the electrical activity of nerve cells. The outstanding electronic and electrochemical performance of graphene hold great promise for bioelectronic applications. For instance, we have reported on arrays of CVD-grown graphene solution-gated FETs (SGFETs) for cell interfacing, demonstrating their ability to transduce with high resolution the electrical activity of individual electrogenic cells.

In this contribution, we will present a detailed discussion on the suitability of CVD-grown graphene SGFETs for in-electrolyte operation, together with a study of the effect of electrolyte composition on the device performance. The sensitivity of SGFETs is dominated by two characteristic parameters: transconductance and electronic noise, which will be analyzed in this talk by in-electrolyte Hall-effect experiments and low-frequency noise characterization. Finally, we will briefly report on the pH and ion sensitivity of graphene devices, highlighting the influence of the chosen substrate for the device fabrication, as well as the effect of surface contamination from the fabrication technology.

This work demonstrates the potential of graphene to outperform state-of-the-art Si-based devices for biosensor and bioelectronic applications.

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