HL 56: GaN: Optical characterization
Mittwoch, 13. März 2013, 12:00–13:00, H15
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12:00 |
HL 56.1 |
Influence of compositional variations of quaternary barrier layers on the optical properties of an InGaN SQW — •Christopher Karbaum, Frank Bertram, Thomas Hempel, Jürgen Christen, Jan Wagner, Michael Jetter, and Peter Michler
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12:15 |
HL 56.2 |
Band-gap renormalization versus Burstein-Moss shift in (0001) GaN investigated by spectroscopic ellipsometry — •Sarah Osterburg, Martin Feneberg, Eberhard Richter, Stephanie Fritze, Armin Dadgar, Alois Krost, and Rüdiger Goldhahn
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12:30 |
HL 56.3 |
Temperature-dependent external quantum efficiencies of bulk ZnO and GaN — •Nils Rosemann, Melanie Pinnisch, Stefan Lautenschläger, Martin Eickhoff, Bruno K. Meyer, and Sangam Chatterjee
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12:45 |
HL 56.4 |
Two-electron transition of excitons bound to neutral Si donors in homoepitaxial AlN — •Benjamin Neuschl, Martin Feneberg, Rüdiger Goldhahn, Zhihong Yang, Thomas Wunderer, Jinqiao Xie, Seiji Mita, Rafael Dalmau, Ramón Collazo, Zlatko Sitar, and Klaus Thonke
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