Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Goup IV elements and their compounds I
HL 59.1: Vortrag
Mittwoch, 13. März 2013, 15:00–15:15, H15
Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers — •Nils Deßmann1, Sergey Pavlov2, Valery Shastin3, Roman Zhukavin3, Stephan Winnerl4, Martin Mittendorff4, and Heinz-Wilhelm Hübers1,2 — 1Institut für Optik und Atomare Physik, Technische Universität Berlin, Deutschland — 2Institut für Planetenforschung, DLR, Berlin, Deutschland — 3Institute for Physics of Microstructures, Nizhny Novgorod, Russia — 4Helmholtz-Zentrum Dresden-Rossendorf, Deutschland
The availability of intense short-pulsed THz radiation from sources such as free electron lasers (FELs) or synchrotrons demands broad-band detectors with very short response times. This triggered a renewed interest in fast germanium (Ge) detectors. The fastest operation of Ge detectors demonstrated in the THz region of the electromagnetic spectrum so far showed an about 2-ns long decay time using highly compensated neutron transmutated p-Ge:Ga:As:Sb. The short-pulse narrow-band FEL radiation allows studying impurity photoconductivity kinetics and provides information important for optimizing the speed of response of extrinsic photoconductors. The capture of free holes and electrons in Ge doped by gallium (Ga) or antimony (Sb) has been studied by a time-resolved pump-probe experiment with the FEL FELBE at the HZDR. For Ga acceptors the relaxation times decrease with increasing pump power from approximately 3 ns to 1 ns (2 ns and 1 ns for Sb donors, respectively). The results support the development of fast photoconductive detectors in the THz region of the spectrum.