Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 59: Goup IV elements and their compounds I

HL 59.5: Vortrag

Mittwoch, 13. März 2013, 16:00–16:15, H15

Growth and bubbling transfer of graphene on recyclable copper substrates — •Simon Drieschner, Max Seifert, Lucas Hess, and José Antonio Garrido — Walter Schottky Institut, München, Deutschland

Chemical vapor deposition (CVD) is the most common method to synthesize large area high quality single layer graphene. Still, the commonly used copper foil substrate shows drawbacks in terms of surface roughness and crystal quality. We demonstrate the CVD growth of graphene in an induction heating setup, which enables the use of solid, polished copper blocks as well as copper single crystals as growth substrate. The parameter space for the growth process is explored, yielding single layer graphene of high crystal quality. A bubbling transfer method is employed to detach the graphene sheet from the copper substrate for electronic characterization. Such electrochemical transfer method allows the recycling of the catalyst substrate and a better control of the graphene crystal quality.