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Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 62: Graphene: SiC substrates and intercalation (O, jointly with HL, TT)

HL 62.12: Vortrag

Mittwoch, 13. März 2013, 18:45–19:00, H17

Deuteration kinetics of the graphene — •Alexei Nefedov1, Alessio Paris2, Nikolay Verbitskiy3,11, Ying Wang4, Alexander Fedorov5,6, Danny Haberer5, Martin Oetzelt7, Luca Petaccia8, Dmitry Usachov6, Denis Vyalikh6,9, Hermann Sagdev10, Christof Woell1, Martin Knupfer5, Berndt Buechner5, Lucia Calliari2, Lada Yashina3, Stephan Irle4, and Alexander Grüneis5,111KIT, Leopoldshafen, Germany — 2FBK-CMM, Trento, Italy — 3MSU, Moscow, Russia — 4Nagoya University, Nagoya, Japan — 5IFW Dresden, Dresden, Germany — 6St. Petersburg University, St. Petersburg, Russia — 7BESSY II, Berlin, Germany — 8Elettra, Trieste, Italy — 9TU Dresden, Dresden, Germany — 10MPI für Polymerforschung, Mainz, Germany — 11University of Vienna, Vienna, Austria

The kinetics of the hydrogenation/deuteration reaction of graphene was studied by time-dependent x-ray photoemission spectroscopy (XPS). The graphene layer was then exposed to hydrogen or deuterium atomic gas beams, obtained by thermal cracking in a tungsten capillary at T=3000 K. After each step XPS of the C1s line was performed in order to measure H/C and D/C ratios. We have observed a strong kinetic isotope effect for the hydrogenation/deuteration reaction leading to substantially faster adsorption and higher maximum D/C ratios as compared to H/C (D/C~35% vs. H/C~25%).

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