Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices
HL 67.1: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Properties of tin oxides prepared by Ion-Beam-Sputtering — •Martin Becker, Robert Hamann, Angelika Polity, Davar Feili, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
The success of n-type oxide semiconductors and its application in oxide-based electronic devices has motivated the interest in p-type oxide based semiconductors. Therefore synthesis of tin monoxide (SnO) recently has received increasing attention. Another phase of this binary system, SnO2, is of great technological interest in manifold applications, such as transparent electrodes, heat-reflecting filters and gas sensing.
The preparation of tin oxide thin films has been performed by many different procedures such as sol/gel, epitaxial procedures or methods working under vacuum conditions like sputtering techniques. Radio-Frequency-Ion-Thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching if utilized as ion source.
Tin oxide thin films were grown by ion-beam sputtering using a 3 inch metallic tin target. Different aspects of growth and properties of the tin oxide phases were investigated in relation to growth parameters such as substrate temperature or flux of oxygen. Structural, optical and electrical properties of the films will be discussed.