Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 69: Poster Session: II-VI semiconductors; Organic semiconductors; Heterostructures
HL 69.19: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Investigation of carrier dynamics in Ga(As1-xBix)/GaAs heterostructures by time-resolved photoluminescence — •Dimitri Kalincev1, Mohammad Khaled Shakfa1, Alexey Chernikov1, Sangam Chatterjee1, Xianfeng Lu2, Shane R. Johnson2, Dan A. Beaton3, Thomas Tiedje4, and Martin Koch1 — 1Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, United States — 3Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada — 4Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada
The ternary Ga(AsBi) semiconductor alloys have received considerable attention over the last decade due to their potential application in photonic and spintronic devices, especially in the near- and mid-infrared spectral range. Bi incorporation into GaAs leads to a great reduction in the band gap resulting from the giant band gap bowing effect. In our recent work, time-resolved photoluminescence (TR-PL) is used to investigate carrier dynamics of Ga(As1-xBix)/GaAs single quantum wells (SQWs) with different Bi contents. The TR-PL measurements are performed as function of excitation density and lattice temperature. The disorder effects and the presence of Bi clusters within the alloy structure are found to strongly influence the spectra and the dynamics.