Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 69: Poster Session: II-VI semiconductors; Organic semiconductors; Heterostructures
HL 69.20: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
The band alignment of the cuprous and cuprite oxide — •Benedikt Kramm, Philipp Hering, Daniel Reppin, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen
In recent work we showed the band alignment for the heterostructures of cuprous oxide, gallium nitride and zinc oxide. We found a conduction band offset (CBO) value of 0.97 eV for Cu2O/ZnO and 0.24 eV for Cu2O/GaN [1]. The low conduction band offset of Cu2O/GaN making GaN a more suitable candidate for the front contact of Cu2O based solar cells. Now we investigated heterostructures of CuO/GaN and CuO/Cu2O. Details about the copper oxide thin films can be found here [2]. We analyzed the photoelectron characteristics of the heterostructures, on the surface and in the depth, and out of this we determined the band alignment of the copper oxide phases among each other and to gallium nitride and zinc oxide.
[1] B. Kramm et al., Appl. Phys. Lett. 100, 094102 (2012), DOI: 10.1063/1.3685719
[2] B.K. Meyer et al., Phys. Status Solidi B, 1-23 (2012), DOI: 10.1002/pssb.201248128