Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I

HL 72.6: Topical Talk

Thursday, March 14, 2013, 12:00–12:30, H13

Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy — •Kazuyuki Tadatomo, Keisuke Yamane, Narihito Okada, Hiroshi Furuya, and Yasuhiro Hashimoto — 2-16-1 Tokiwadai, Ube, Yamaguchi, Japan

This paper presents the growth of thick semipolar {10-11}, {11-22}, and {20-21} GaN layers on n, r, and {22-43} patterned sapphire substrates (PSSs), respectively, by hydride vapor phase epitaxy. The reduction rate of the dislocation density varied with growth planes. For {10-11} GaN layers, the dislocation density drastically decreased at over 100 *m, which was as fast the reduction rate as in the case of the c-plane. It was revealed that the reduction rate of the dislocation density could be controlled by the proper selection of the growth plane. We obtained a freestanding GaN of 2 inch diameter. Thick GaN growth led to the self-separation of the GaN layer from the PSS during cooling process. The separation plane formed at the interface between GaN and PSS, which is different from the case of a conventional c-plane GaN/sapphire. The separationability of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall. A freestanding semipolar GaN substrates were then obtained.