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Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I

Donnerstag, 14. März 2013, 09:30–13:15, H13

09:30 HL 72.1 Topical Talk: Defect reduction methods for GaN heteroepitaxial films grown along semipolar orientations — •Philippe Vennéguès
10:00 HL 72.2 Topical Talk: Identification of defects in semipolar GaN and (Al,Ga,In)N by cathodoluminescence spectroscopy — •Klaus Thonke, Ingo Tischer, Matthias Hocker, Manuel Frey, and Ferdinand Scholz
10:30 HL 72.3 Topical Talk: Stacking fault elimination in heteroepitaxial semi-polar GaN — •Armin Dadgar
11:00 HL 72.4 Enhanced stacking fault induced indium diffusion on semipolar gallium nitride based ridges — •Matthias Hocker, Ingo Tischer, Klaus Thonke, Junjun Wang, Robert A.R. Leute, Ferdinand Scholz, Johannes Biskupek, Willem van Mierlo, and Ute Kaiser
  11:15 Coffee break
11:30 HL 72.5 Topical Talk: Strain and Relaxation in Nonpolar and Semipolar GaN-based LEDs and Laser Diodes — •Kathryn Kelchner, Shuji Nakamura, Steven DenBaars, and James Speck
12:00 HL 72.6 Topical Talk: Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy — •Kazuyuki Tadatomo, Keisuke Yamane, Narihito Okada, Hiroshi Furuya, and Yasuhiro Hashimoto
12:30 HL 72.7 Optical properties of MBE grown cubic AlGaN/GaN double quantum well structures — •Tobias Wecker, Christian Mietze, Dirk Reuter, and Donat J. As
12:45 HL 72.8 InGaN/GaN based semipolar light emitting diodes — •Junjun Wang, Matthias Hocker, Robert Leute, and Ferdinand Scholz
13:00 HL 72.9 Epitaxy of Al1−xInxN on different GaN-surface orientations — •Ernst Ronald Buß, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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