Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I

HL 72.4: Vortrag

Donnerstag, 14. März 2013, 11:00–11:15, H13

Enhanced stacking fault induced indium diffusion on semipolar gallium nitride based ridges — •Matthias Hocker¹, Ingo Tischer¹, Klaus Thonke¹, Junjun Wang², Robert A.R. Leute², Ferdinand Scholz², Johannes Biskupek³, Willem van Mierlo³, and Ute Kaiser³ — ¹Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, D-89081 Ulm, Germany — ²Institute of Optoelectronics, Ulm University, D-89081 Ulm, Germany — ³Central Facility of Electron Microscopy, Ulm University, D-89081 Ulm, Germany

Semipolar indium gallium nitride (InGaN) quantum wells are promising candidates for long wavelength output light emitting devices with increased efficiency. For this purpose, gallium nitride (GaN) based non-c plane structures are overgrown with several InGaN quantum wells. With increasing number of quantum wells on top of these structures, a higher density of stacking faults and dislocations leads to an enhanced incorporation and diffusion of indium towards the ridge of these structures.

Samples with different structures were investigated by spatially and spectrally resolved cathodoluminescence (CL), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX). The CL measurements allow to identify indicators of these defects to avoid tedious TEM measurements.