Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 78: Graphene: Preparation and characterization I (O, jointly with HL, TT)
HL 78.6: Vortrag
Donnerstag, 14. März 2013, 11:45–12:00, H17
In situ LEEM Investigations of the Growth of Graphene on Ni(111)-Films — •Patrick Zeller1, Michael Weinl2, Florian Speck3, Markus Ostler3, Thomas Seyller3, Matthias Schreck2, and Joost Wintterlin1 — 1Department Chemie, Ludwig-Maximilians-Universität München — 2Institut für Physik, Universität Augsburg — 3Department für Physik, FAU Erlangen-Nürnberg
We report about low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) investigations of graphene grown on single-crystalline Ni(111) films. The films, which may provide an easy and economical way towards a scalable graphene synthesis, consist of 150 nm thick, heteroepitaxially grown Ni(111) layers on a Si(111) wafer with a YSZ-buffer layer. Monolayer graphene was grown by chemical vapor deposition of ethylene and in situ LEEM investigations of the graphene growth were performed. Also the formation of nickel carbide and its transformation into graphene were observed. Furthermore we noticed an involvement of the bulk during the reaction. At the beginning of the ethylene dosing the C atoms dissolve in the bulk, and after nucleation segregation of C atoms starts. We could also observe the healing of rotated graphene towards aligned, high quality graphene in a small temperature range. Also a temperature dependent formation and healing of dislocation lines in the Ni films was observed.