Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 81: Focus Session: Extended defects in semi- and nonpolar GaN II

HL 81.10: Talk

Thursday, March 14, 2013, 17:30–17:45, H13

Growth Studies on Submicrometer-sized GaN Stripes with Semipolar QWs — •Robert Anton Richard Leute, Junjun Wang, Tobias Meisch, and Ferdinand Scholz — Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany

Nanoimprint technology is used to pattern dielectric masks on c-oriented GaN templates grown on two-inch sapphire substrates. Selective epitaxy of GaN and InGaN results in submicrometer-sized GaN stripes with semipolar side facets. The stripes have triangular cross-section and form a 1D grating with a 260 nm periodicity. Stripes aligned ∥ m and ∥ a resulting in {1122} and {1011} facets respectively are studied. Growth is optimized to create sharp ridges (below 10 nm wide). Quantum wells emitting in the blue to cyan spectral range are deposited on the side surfaces. The effect of embedding as well as the inclusion of InGaN pre-wells and AlGaN claddings is investigated.