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HL: Fachverband Halbleiterphysik
HL 81: Focus Session: Extended defects in semi- and nonpolar GaN II
HL 81.12: Vortrag
Donnerstag, 14. März 2013, 18:00–18:15, H13
Microphotoluminescence studies on the effect of V-pits and the surface orientation on the indium incorporation within InGaN quantum wells on free standing polar GaN — •Sebastian Bauer1, Benjamin Neuschl1, Ingo Tischer1, Manuel Frey1, Matthias Hocker1, Robert A.R. Leute2, SK. Shaid-Ur Rahman2, Martin Klein2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — 2Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany
During the growth of c-plane GaN by hydride vapor phase epitaxy, occasionally large "V-pits" and different surface facets are formed. When such bulk-like thick free standing layers are overgrown by metal organic vapor phase epitaxy with a GaN layer containing multiple InGaN quantum wells, different indium content and quantum well thicknesses result on different facets and facet transition regions.
We investigate such samples in detail by spatially resolved micro-photoluminescence and cathodoluminescence at different temperatures. An effect of the surface orientation on the incorporation of indium can be clearly observed.