Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 83: Transport I
HL 83.3: Vortrag
Donnerstag, 14. März 2013, 15:30–15:45, H16
Influence of boron cluster states on the transport properties of (B,Ga)P — •Steve Petznick1, Kathleen Klinkmüller1, Kerstin Volz2, and Peter J. Klar1 — 1Institute of Experimental Physics I, Justus-Liebig University, Giessen, Germany — 2Structure & Technology Research Laboratory (STRL), Philipps-Universität, Marburg, Germany
The influence of boron incorporation in n-type BxGa1−xP:Y (with 0.9 ≤ x ≤ 1.9 % and Y = Te, Si) layers on the transport properties has been studied. The 500 nm thick (B,Ga)P layers were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating (001) GaP substrates. Transport measurements at ambient and hydrostatic pressure were performed at different temperatures between 1.6 and 280 K in Van der Pauw geometry and in applied magnetic fields up to 10 T.
Boron is an isovalent impurity in GaP yielding to a density of localized states in the vicinity of the conduction band edge. These localized states act as scattering centers and have a severe impact on the transport behavior of this n-type material.
Hydrostatic pressure allows one to tune the band structure while the composition stays exactly the same. Therefore measurements under hydrostatic pressure were performed to examine the interplay of boron cluster states and the conduction band edge states. The impact on magneto-resistance, resistivity, carrier mobility and concentration, and their temperature and pressure dependence will be discussed.