Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 89: Transport II

HL 89.5: Vortrag

Donnerstag, 14. März 2013, 17:45–18:00, H16

Exchange Interaction of Phosphorus Donors and Interface Defects at the Si/SiO₂ Interface — •Max Suckert¹, Felix Hoehne¹, Lukas Dreher¹, Hans Huebl², Martin Stutzmann¹, and Martin S. Brandt¹ — ¹Walter Schottky Institut, Garching, Germany — ²Walther-Meißner-Institut, Garching, Germany

Electrically detected magnetic resonance (EDMR) has been established as a versatile tool to investigate the properties of paramagnetic defects. The method involves the formation of spin pairs whose symmetry determines the transport properties resulting in a resonant current change when spins are flipped by microwave irradiation.

We apply the method of electrically detected double electron–electron resonance (EDDEER), recently added to the EDMR toolbox, to determine the coupling between phosphorus donors ³¹P and dangling bonds P_b0 at the Si/SiO₂ interface quantitatively. This spin pair is of particular interest for the electrical readout mechanism allowing for the detection of coherent spin manipulation of the ³¹P and decoherence introduced by the P_b0 to the ³¹P spins. By modelling the exchange interaction numerically and comparing the result to the EDDEER time evolution, we assign the typical coupling strength of 600 kHz observed to a distribution of ³¹P–P_b0 spin pairs with distances in the range from 14 to 20 nm.

The work was supported by DFG (Grant No. SFB 631, C3 and Br 1585/8-1) and BMBF.