Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 90: Poster Session: Quantum information systems; Optical properties; Ultrafast phenomena
HL 90.6: Poster
Donnerstag, 14. März 2013, 16:00–20:00, Poster A
Photocapacitance of metal-bilayer oxide-semiconductor capacitors — •Varun John1, Danilo Bürger1,2, Ilona Skorupa2, Gyyörgy.J. Kovacs2, Martin Schuster3, Oliver G. Schmidt4, and Heidemarie Schmidt1 — 1University of Technology Chemnitz, Faculty of Electrical Engineering and Information Technology, 09107 Chemnitz, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Germany — 3NaMLab gGmbH, 01187 Dresden, Germany — 4Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
Photocapacitance-voltage measurements have been performed on metal-VO2/SiO2-p-Si semiconductor capacitors under illumination in the spectral range from 300 nm to 800 nm. For depletion and inversion bias mode we observe that for energies smaller than 2.5 eV, i.e. for energies below the transition energy between a set of oxygen 2p orbitals and the Fermi energy of VO2 [1], the photocapacitance is larger than the capacitance without illumination. Furthermore, the photocapacitance has a broad maximum in the spectral range from 650 nm to 750 nm. For the accumulation bias mode the photocapacitance equals the capacitance without illumination. The drift of photogenerated charge carriers is used to discuss the observed photocapacitance effects in SiO2 single layer and VO2/SiO2 bilayer semiconductor capacitors with varying thickness of the PLD grown VO2 [2] and the thermally grown SiO2 layers. [1] C.N. Berglund and H.J. Guggenheim, Phys. Rev. 185 (1969); [2] György J. Kovács, D. Bürger et al., J. Appl. Phys. 109 (2011)