Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: Structure and transport in organic photovoltaics; Photovoltaics; Impurities/Amorphous semiconductors; New materials
HL 92.8: Poster
Donnerstag, 14. März 2013, 16:00–20:00, Poster A
Investigation of the sulfur doping profile of femtosecond-laserdoped Black Silicon solar cells — •Kay-Michael Günther1, Alexander Bomm2, Thomas Gimpel2, Michal Schulz1, Holger Fritze1, Wolfgang Schade1,2, and Stefan Kontermann2 — 1Clausthal University of Technology, EFZN, Am Stollen 19B, 38640 Goslar, Germany — 2Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar, Germany
Irradiating silicon with femtosecond-laser pulses under a SF6 atmosphere leads to the incorporation of sulfur and a structured surface. Very high sulfur concentrations can be achieved and an enhanced absorptance in the infrared spectral region is observed. This material is called Black Silicon and is used to fabricate solar cells and infrared photodetectors.
In this work, we investigate the sulfur doping profile of Black Silicon with 5 pulses per spot with secondary ion mass spectroscopy (SIMS) and capacitance-voltage spectroscopy (CV). Due to the strong surface roughness and the intrinsic pn-junction of the material, we applied a CV technique which uses impedance spectroscopy (IS) to compensate for additional space charges and series resistances. We compare samples with different annealing steps and different process atmospheres and we show that only a part of the incorporated sulfur is electrically active.