Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 94: Quantum wires and nanocrystals: Optical properties

HL 94.4: Vortrag

Freitag, 15. März 2013, 10:15–10:30, H13

Single core-shell GaAs/AlGaAs nanowires: a close look by near-field optical spectroscopy — •Alexander Senichev¹, Vadim Talalaev^1,2, Jörg Schilling², George Cirlin^3,4,5, and Peter Werner¹ — ¹Max-Planck-Institut, Halle, Germany — ²Martin-Luther-Universität, ZIK "SiLi-nano", Halle, Germany — ³A. F. Ioffe Physico-Technical Institute, St. Petersburg, Russia — ⁴St. Petersburg Physics and Technology Center for Research and Education, St. Petersburg, Russia — ⁵Institute for Analytical Instrumentation, St. Petersburg, Russia

We report on the growth and the study of optical properties of self-catalyzed GaAs/AlGaAs core-shell nanowires (NW). These GaAs/AlGaAs NWs were generated by molecular beam epitaxy. The presence of zincblende (ZB) and wurtzite (WZ) crystal phases in NW is discussed. We investigate a homogeneity of photoluminescence (PL) intensity along a NW and the appearing of features in PL spectra, corresponding to the exciton emission from ZB and WZ structure, with a high spatial resolution (< 200 nm). For this purpose a low-temperature near-field scanning optical microscope operating at a temperature 10 K inside a high vacuum chamber was applied. Selecting of specific NW allow us to get PL and transmission electron microscopy measurements of the same single NW. Preliminary measurements showed inhomogeneous PL intensity distribution along NW and presence of additional spectral line in vicinity of NW apex. For statistical analysis, other NWs from the same growth series are under investigation.