Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 95: Spintronics/Quantum information: Vacancies in diamond and SiC (HL, jointly with TT)
HL 95.2: Vortrag
Freitag, 15. März 2013, 09:45–10:00, H14
Resonant addressing and manipulation of silicon vacancy spin qubits in silicon carbide — •Daniel Riedel1, Franziska Fuchs1, Hannes Kraus1, Andreas Sperlich1, Vladimir Dyakonov1,2, Alexandra Soltamova3, Vladimir Ilyin4, Pavel Baranov3, and Georgy Astakhov1 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, D-97074 Würzburg — 2ZAE Bayern, D-97074 Würzburg — 3Ioffe Physical-Technical Institute, St. Petersburg, RU-194021 Russia — 4Saint Petersburg Electrotechnical University, St. Petersburg, RU-194021 Russia
Although several candidates have yielded feasible features for solid-state quantum information processing, there is a search for new systems with even higher potential [1].
We report that silicon vacancy (VSi) defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of nitrogen-vacancy defects in diamond.
Similar to atoms, the VSi qubits can be controlled under the double radio-optical resonance conditions, allowing for selective addressing and manipulation [2]. Magnetic resonance techniques are used to clarify the VSi spin multiplicity and reveal a long spin memory.
Our results pave the way for potential applications of the VSi defect in quantum information processing and spintronics.
References:
[1] D. DiVincenzo, Nature Materials 9, 468 (2010).
[2] D. Riedel et al., Physical Review Letters 109, 226402 (2012).