Regensburg 2013 – wissenschaftliches Programm
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KR: Fachgruppe Kristallographie
KR 4: Quantitative Materialanalyse (MI jointly with KR)
KR 4.2: Vortrag
Dienstag, 12. März 2013, 10:15–10:30, H5
Advances in Low Energy X-ray Analysis with state of the art Silicon Drift Detectors using EPMA, SEM and STEM — •T. Salge1, R. Terborg1, M. Falke1, O. Tunckan2, A. Kearsley3, D. Pereira da Silva Dalto4, M.J.O.C. Guimarães4, R. Ferhati5, I. Bjurhager6, S. Turan2, M.E.F. Garcia4, and W. Bolse5 — 1Bruker Nano GmbH, Berlin, Germany — 2Anadolu University, Eskisehir, Turkey — 3Natural History Museum, London, UK — 4UFRJ, Rio de Janeiro, Brazil — 5University of Stuttgart, Germany — 6Ångström Laboratory, Uppsala, Sweden
Element analysis of ever smaller structures in bulk samples requires low electron beam energy to enhance spatial resolution. To separate overlapping peaks at low energy X-ray lines (e.g. N-K/Ti-L), the line deconvolution algorithms in EDX software is important. We describe features at the submicron scale (e.g. ceramic-metal joints) using SDDs in conventional geometries. The annular four channel SDD placed between the pole piece and sample covers a large solid angle of 1.1sr. Features with high topography from experiments with wafer irradiation and hypervelocity impact craters can be analyzed as well as beam sensitive polymer composites. For cultural heritage and biological samples, carbon coating can be avoided during low vacuum acquisition. Nano- and atomic scale analysis of electron transparent samples ideally requires not only high solid angle detector design but also adjustments in pole piece and sample holder geometry as well as a high quality electron probe. This approach will be demonstrated to allow 1 sr solid angle and single atom spectroscopy even at 0.1 sr and 60 kV.