Regensburg 2013 – wissenschaftliches Programm
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KR: Fachgruppe Kristallographie
KR 4: Quantitative Materialanalyse (MI jointly with KR)
KR 4.3: Vortrag
Dienstag, 12. März 2013, 10:30–10:45, H5
Quantitative Analysis of Pyramid Textured Silicon Wafers and Size Dependence of Optical and Electronic Properties — •Jan Kegel1,2, Heike Angermann2, Uta Stürzebecher3, Erhard Conrad2, and Bert Stegemann1 — 1Hochschule für Technik und Wirtschaft, Berlin, Germany — 2Helmholtz Zentrum Berlin, Berlin, Germany — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Erfurt, Germany
Wet-chemical etching in alkaline solution is used to texture monocrystalline silicon wafers for high-efficiency solar cells. This texturing result in micron-sized random pyramids on the wafer surface which reduce reflection losses and increase the absorption probability. Successful texturing is evaluated by reflection and charge carrier lifetime measurements. Both parameters are found to be influenced by the geometric surface properties as well. Thus, elaborated image processing is applied for precise and reproducible evaluation of pyramid number and size distribution. The results show a distinct dependence of the total reflection and the minority charge carrier lifetime on the pyramid size distribution. Based on these results etching parameters can be adjusted to produce optimal surface properties with respect to highest solar cell efficiencies.