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MI: Fachverband Mikrosonden

MI 4: Analytische Elektronenmikroskopie

MI 4.4: Vortrag

Montag, 11. März 2013, 16:30–16:45, H5

Investigation of D3-like luminescence in mc-solar silicon — •Christoph Krause¹, Daniel Mankovics¹, Tzanimir Arguirov¹, and Kittler Martin² — ¹Joint Lab IHP/BTU, Brandenburgische Technische Universität, Cottbus — ²Joint Lab IHP/BTU, IHP GmbH, Frankfurt (Oder)

In the last years we observed an increasing number of detections of a very intense luminescence in the spectral region of D3 during investigations at multicrystalline silicon. The defects which cause this luminescence even at room temperature could affect the efficiency of solar cells. Furthermore cathodoluminescence revealed a beam current of just a few pico ampere is enough to excite this kind of luminescence which could be interesting for building up some kind of light emitting diode for semiconductor based laser and also on-chip optical data transfer devices. For this reasons we tried to identify the origin with the help of photo-and cathodoluminescence as well as electron beam induced current measurements (EBIC). The temperature dependent correlation between intense luminescence and very strong EBIC-contrast could maybe point to luminescent transitions as main recombination path. We also observed a possible relation between the temperature induced shift of the center wavelength and the band gap energy.