Regensburg 2013 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 56: Phase Transformations II

MM 56.3: Vortrag

Donnerstag, 14. März 2013, 12:15–12:30, H26

Spinodal decomposition versus nucleation and growth mechanism of phase separation in nonstoichiometric silicon oxide films during high temperature annealing — •Andrey Sarikov — V. Lashkarev Institute of Semiconductor Physics NAS Ukraine, 45 Nauki avenue, 03028 Kiev, Ukraine

This work is devoted to the study of the thermodynamic mechanisms of phase separation in the nonstoichiometric silicon oxide films during high temperature anneals. Based on the obtained earlier expression for the Gibbs free energy of nonstoichiometric silicon oxide phase, the binodal and the spinodal characteristics of silicon oxide as well as the regions of stoichiometry indexes corresponding to the stability, metastability, and instability of silicon oxide phase with respect to the phase separation as the functions of temperature are determined. The regions of the phase separation process taking place according to the spinodal decomposition and according to the nucleation and growth mechanism are presented. Obtained results are useful for the development of the kinetic theory of phase separation in nonstoichiometric silicon oxide films and the formation of the structures consisting of Si nanoinclusions in the silicon oxide matrix.