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Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 13: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (jointly with HL)

O 13.5: Topical Talk

Monday, March 11, 2013, 16:45–17:15, H2

Development of gallium oxide power devices — •Masataka Higashiwaki1,2, Kohei Sasaki1,3, Akito Kuramata3, Takekazu Masui4, and Shigenobu Yamakoshi31National Institute of Information and Communications Technology, Koganei, Tokyo, Japan — 2JST PREST, Chiyoda, Tokyo, Japan — 3Tamura Corporation, Sayama, Saitama, Japan — 4Koha Co., Ltd., Nerima, Tokyo, Japan

Gallium oxide (Ga2O3) has excellent material properties for power device applications represented by the extremely large breakdown field of 8 MV/cm due to a large band gap of 4.8–4.9 eV. Another important feature in industry is that large single-crystal β-Ga2O3 bulks can be fabricated with melt-growth methods. We recently succeeded in fabricating Ga2O3 metal-semiconductor field-effect transistors (MESFETs) and Schottky barrier diodes (SBDs) on single-crystal β-Ga2O3 substrates by using newly developed technologies for making single-crystal substrates, growing conductivity-controlled epitaxial films, and fabricating devices. The MESFETs exhibited excellent device characteristics including an off-state breakdown voltage (Vbr) over 250 V, an extremely low leakage current (several µA/mm), and a high on/off drain current ratio of around 10,000. The SBDs also showed good characteristics such as an ideal factor very close to 1.0 and a high reverse Vbr. These results indicate that Ga2O3 have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN for power device applications.

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