Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 22: Nanostructures at Surfaces II

O 22.11: Vortrag

Montag, 11. März 2013, 18:30–18:45, H45

Investigation of the doping profile of Zn-doped GaAs nanowires by a multitip STM — •Matthias Steidl^1,4, Weihong Zhao^1,4, Werner Prost², Stefan Korte³, Bert Voigtländer³, Peter Kleinschmidt^5,4, and Thomas Hannappel^1,4,5 — ¹Institut für Physik, Fachgebiet Photovoltaik, TU Ilmenau, D-98684 Ilmenau — ²Lehrstuhl für Halbleitertechnik/Halbleitertechnologie, Universität Duisburg-Essen, D-47048 Duisburg — ³Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, D-52425 Jülich, Germany — ⁴Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — ⁵CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt

III-V semiconductor nanowires (NWs) are promising building blocks for novel semiconductor devices in future electronic and opto-electronic applications such as solar cells. In this context a homogeneous distribution of the dopant over the whole NW is of great importance. We have grown p-type Zn-doped GaAs-NWs on GaP(111)B using the Au-assisted vapor-liquid-solid growth mode in a metal-organic vapor phase apparatus. Prior to the actual growth, diethylzinc as Zn precursor source is offered for several minutes, so that the Au-particle is saturated with Zn and the NW is doped from beginning of the growth. For electrical characterization these free-standing NWs were contacted using a multitip STM allowing us to measure the resistivity via four-point probe measurements over nearly the complete length of a NW. These measurements reveal a constant resistivity after 1.5 µm NW growth, while it is significantly increasing towards the NW bottom.