Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 26: Transport: Graphene - Electronic Properties and Transport 2 (jointly with DS, HL, MA, and TT)
O 26.1: Vortrag
Dienstag, 12. März 2013, 09:30–09:45, H17
Transport properties of high-quality reduced graphene oxide — •Michael Enzelberger1, Siegfried Eigler2, Philipp Hofmann1, Stefan Grimm2, Andreas Hirsch2, and Paul Müller1 — 1Department of Physics and Interdisciplinary Center for Molecular Materials, Universität Erlangen-Nürnberg — 2Department of Chemistry and Pharmacy, and Institute of Advanced Materials and Processes (ZMP), Universität Erlangen-Nürnberg
Chemical production of graphene, especially reducing graphene oxide has gained a lot of interest in recent years. Yet the transport properties of such materials are usually not compatible to those of graphene.
We have found a way to overcome this problem using a modification of the standard Hummer’s method. Single flakes of reduced graphene oxide have been investigated. The graphene oxide was deposited onto a SiO2/Si substrate and subsequently reduced using hydrogen iodine. The resulting reduced graphene oxide samples were patterned by electron beam lithography. We have characterized the quality of the samples by combining Raman spectroscopy and Hall mobility measurements in magnetic fields up to 14 T and temperatures down to 0.3 K.
High-quality samples had a Raman D/G ratio of better than 1 and showed Hall mobilities exceeding 1000 cm2/Vs. This is nearly two orders of magnitude higher than what is known for standard reduced graphene oxide. The best samples even show Shubnikov-de Haas oscillations and Hall plateaus.