Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.76: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B1
Work function study and surface photovoltage phenomena of graphene on SiC — •Samir Mammadov1, Jürgen Ristein1, and Thomas Seyller1,2 — 1Lehrstuhl für Technische Physik Erwin-Rommel-Str. 1 91058 Erlangen — 2Technische Universität Chemnitz Institut für Physik * Technische Physik Reichenhainer Straße 70 09126 Chemnitz
Subject of this study is the investigation of the work function and band-bending of epitaxial graphene(EG) on SiC. Two types of samples were investigated: regular EG *lms and H-intercalated EG *lms, referred to as quasi-freestanding graphene (QFG). EG *lms were formed by thermal decomposition on the Si-face of 6H-SiC substrates and QFG samples were formed by subsequentially intercalating EG samples by hydrogen. The work function and it*s dependance on the number of graphene layers was precisely determined for each type of sample by the Kelvin method. Additionally, laser induced surface photovoltage was measured in situ. The results are used to construct a full band diagram for the graphene/SiC heterostructure.