Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.86: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B1
Epitaxial growth of graphene on copper foil — •Christian Raidel1, Felix Fromm1, Roland Koch1, Johannes Jobst2, and Thomas Seyller1,3 — 1FAU Erlangen-Nürnberg, Technische Physik, Erlangen, Deutschland — 2FAU Erlangen-Nürnberg, Angewandte Physik, Erlangen, Deutschland — 3TU Chemnitz, Institut für Physik, Chemnitz, Deutschland
We investigated the growth of epitaxial graphene on commercial copper foil by atmospheric pressure chemical vapor deposition using methane and pyridine as precursors. Pyridine was used to incorporate nitrogen as a dopant into graphene. For optimal growth conditions the copper foils were pretreated by electro-polishing and annealed at elevated temperatures for achieving low defect densities and large grains. The growth of the graphene layers was studied by x-ray photoelectron spectroscopy (XPS), while scanning electron microscopy (SEM) was used to determine structural details of the layers. In addition, Raman spectroscopy was employed to investigate the quality of the layers.
XPS measurements of the as-grown films revealed that the growth resulted in multi-layer graphene. Transfer of the graphene layers from the cupper foil onto SiO2 wafers was also studied. The XPS spectra remained basically unchanged. On the other hand, Raman spectroscopy indicates an increase in strain and defects after the transfer. Graphene layers grown with pyridine were transferred using a nitrogen-fee resist. In that case, XPS showed the existence of nitrogen in the layer. The origin of the nitrogen content, however, cannot be absolutely pinpointed to the employed precursor, as will be discussed in the presentation.