Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: Poster Session II (Organic films and electronics, photoorganics; Nanostructures; Plasmonics and nanooptics, Surface chemical reactions and heterogeneous catalysis, Surface dynamics )
O 36.52: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B2
Characterisation of Boron-doped Silicon Nanowires — •Stefan Weidemann1, Peter Schäfer2, Stefan Kowarik2, Klaus Rademann3, and Saskia F. Fischer1 — 1Novel Materials, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Coherent Optics with X-rays, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 3Nanostructured Materials, Humboldt-Universität zu Berlin, 10099 Berlin, Germany
Nanostructures of silicon reveal new intrinsic properties like decreased thermal conductivity [1]. To date, it remains a challenge to measure simultaneously thermal and electronic transport properties of individual silicon nanowires. Here, we prepare silicon nanowires by metal-assisted chemical etching (MACE)[2] with solid, rough and porous surfaces in dependence of the boron doping concentration (resistivities of ρ<10 mΩcm, ρ=14-23 Ωcm, ρ>1 kΩcm).
Nanowire lengths up to 110 µm (undoped Si, ρ>1 kΩcm), 90 µm (medium doped Si, ρ=14-23 Ωcm) and about 30 µm (highly doped Si, ρ<10 mΩcm) are achieved. Fabrication on wafer scale is possible.
Surface and structural properties of both nanowire ensembles and individual nanowires are investigated by
electron microscopy and x-ray diffraction.
Single nanowires are investigated with respect to their thermoelectrical properties.
A. I. Hochbaum et al., Nature 451, 163 (2008)
Z. Huang et al., Adv. Mater. 2011, 23, 285-308