Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 36: Poster Session II (Organic films and electronics, photoorganics; Nanostructures; Plasmonics and nanooptics, Surface chemical reactions and heterogeneous catalysis, Surface dynamics )

O 36.68: Poster

Dienstag, 12. März 2013, 18:15–21:45, Poster B2

Adsorption of tetrahydrofuran on the Si(001) surface studied by means of STM and XPS — •Marcel Reutzel1, Gerson Mette1, Michael Dürr1,2, Ruben Bartholomäus3, Ulrich Koert3, and Ulrich Höfer11Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, D-35032 Marburg — 2Fakultät Angewandte Naturwissenschaften, Hochschule Esslingen, D-73728 Esslingen — 3Fachbereich Chemie, Philipps-Universität, D-35032 Marburg

A promising possibility to compete with the challenges of miniaturization in semiconductor device physics is the functionalization of inorganic semiconductor surfaces with organic molecules. In this context, we have investigated the reaction of the frequently-used organic solvent tetrahydrofuran (THF) on Si(001) by means of scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Despite its low reactivity in solvent based organic chemistry, THF was found to exhibit a complex surface chemistry on the Si(001) surface.

At low temperatures, the STM images indicate an adsorption geometry with the THF molecule located at the lower Si dimer atom. In combination with an observed energetic shift to higher binding energies in the O(1s) XP spectra, a dative bonding between a free electron pair of the oxygen atom and the empty dangling bond surface state is suggested. At temperatures Ts>270 K, an irreversible rearrangement of the THF molecules is observed. The resulting configurations bridge two dimer rows. For temperatures Ts>700 K, the STM and XPS data point to the formation of silicon carbide and silicon oxide structures.

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