Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 58: Poster Session III (Solid-liquid interfaces; Scanning probe and other methods; Electronic structure theory; Spin-orbit interaction)
O 58.83: Poster
Mittwoch, 13. März 2013, 18:15–21:45, Poster B1
III-V semiconductors for photoelectrolysis and their interface to the electrolyte — •Matthias M. May1,2, Wolf-Dietrich Zabka1,2, Oliver Supplie1,2, Helena Stange1,2, Christian Höhn1, Hans-Joachim Lewerenz1,3, and Thomas Hannappel1,4,5 — 1Helmholtz-Zentrum Berlin, Institute of Solar Fuels — 2Humboldt-Universität zu Berlin, Institut für Physik — 3California Institute of Technology, Pasadena, USA — 4TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik — 5CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, Erfurt
III-V semiconductors such as the dilute nitride GaP(N) represent an interesting material class for photoelectrolysis, especially in multi-junction approaches [1]. Corrosion and the charge-transfer efficiency towards the electrolyte [2] are challenges that have to be addressed by growth and/or electrochemical processing of the semiconductor surfaces. We prepare GaP(N) by metalorganic vapour phase epitaxy under in situ control with reflection anisotropy spectroscopy (RAS). Applying RAS and photoelectron spectroscopy at the semiconductor-liquid interface, we aim to improve the microscopic insight into the interface and to achieve in situ control of electrochemical processing. To this end, we perform H2O adsorption in UHV as model-experiments, which we compare with results for the electrochemical environment.
Döscher et al.,ChemPhysChem 13:2899 (2012). [2] Kaiser et al, ChemPhysChem 13:3053 (2012).