Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 79: Oxide Surfaces III
O 79.5: Vortrag
Donnerstag, 14. März 2013, 17:00–17:15, H45
Post deposition annealing of ceria *films on Si(111) — •Henrik Wilkens1, Robert Oelke1, Olga Schuckmann1, Reinhard Olbrich1, Marvin H. Zoellner2, Thomas Schroeder2, Michael Reichling1, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
A 250 nm cub-CeO2(111) film grown on hex-Pr2O3/Si(111) is annealed under UHV conditions. Atomic force microscopy (AFM) and spot profile low energy electron diffraction (SPA-LEED) were used to resolve the surface morphology. The chemical composition was studied by photoelectron spectroscopy (XPS). In addition, the changes of the bulk structure were probed by in-situ x-ray diffraction (XRD) measurements.
The surface exhibit triangular shaped facets as shown by AFM which vanish at higher temperatures. Moreover, several superstructures appear in the LEED pattern due to ordered oxygen vacancy formation. Also the XPS data shows that the surface reduces continuously at higher annealing temperatures.
The XRD measurements reveal that not the whole film is reduced since a diffraction signal of cub-CeO2(111) is still visible at elevated temperatures. Furthermore, it is shown that above a critical temperature the hex-Pr(0001) buffer layer is destroyed and silicon diffuses into the ceria film.