Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 90: Semiconductor Substrates
O 90.11: Talk
Friday, March 15, 2013, 13:00–13:15, H45
Heteroepitaxial growth of GaP on Si(111) substrates for III-V nanowire solar cells — •Agnieszka Paszuk1,2, Weihong Zhao1,2, Matthias Steidl1,2, Sebastian Brückner1,2, Anja Dobrich2, Johannes Luczak2, Peter Kleinschmidt2,3, Henning Döscher1,2, and Thomas Hannappel1,3 — 1Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, Ilmenau — 2Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Erfurt
III-V nanowires provide opportunities to realize high efficiency solar cells. We intend to grow nanowires by metal organic vapor phase epitaxy (MOVPE) on III-V/Si(111) templates to benefit from silicon as a low cost substrate. As a buffer layer we use GaP, since it is almost lattice matched to silicon. To achieve successful nanowire growth on GaP/Si(111) it is required to prepare GaP(111)B surfaces. A contamination-free transfer system enables us to study the MOVPE prepared surfaces with various surface science tools. To understand the heteroepitaxial growth of GaP on Si(111) we studied homoepitaxial GaP(111)A and B surfaces as a reference. Different characteristic surface reconstructions visible in low energy electron diffraction (LEED) enable identification of the GaP polarity. For growth on Si(111), changing the Si surface termination we can control the resulting GaP polarity.