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O: Fachverband Oberflächenphysik

O 90: Semiconductor Substrates

O 90.4: Vortrag

Freitag, 15. März 2013, 11:15–11:30, H45

Manipulation of subsurface donors in ZnO — •hao zheng, alexander weismann, and richard berndt — Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel

The capability of manipulating structures at the atomic scale has become an important asset of the scanning tunneling microscope (STM). Nowadays atoms may be arranged into nanostructures with device-like functions. Usually this exquisit control is limited to adatoms. A recent exception is interstitial H in Pd, which could be moved with an STM tip. No comparable results have been reported for semiconductors where the controlled positioning of individual dopants would be desirable. We present the manipulation of interstitial Zn in ZnO, a semiconductor with extraordinary properties. Zn interstitials are of particular interest because they may be the sought-after shallow donors that lead to n-type conductance of ZnO despite its wide band gap of 3.4 eV.