Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 90: Semiconductor Substrates
O 90.7: Talk
Friday, March 15, 2013, 12:00–12:15, H45
The interface of III-V semiconductors to H2O studied by reflection anisotropy spectroscopy and UPS — •Wolf-Dietrich Zabka1,2, Matthias M. May1,2, Oliver Supplie1,2, Helena Stange1,2, Christian Höhn1, Hans-Joachim Lewerenz1,3, and Thomas Hannappel1,4,5 — 1Helmholtz-Zentrum Berlin, Institute for Solar Fuels — 2Humboldt-Universität zu Berlin, Institut für Physik — 3California Institute of Technology, Pasadena, USA — 4Technische Universität Ilmenau, Institut für Physik,Fachgebiet Photovoltaik — 5CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, Erfurt
III-V semiconductors are a promising absorber material class for solar-driven water splitting [1]. The interface between the semiconductor and H2O is crucial for stability as well as charge transfer efficiency to the electrolyte [2,3].
For a better understanding of this interface, we perform model-experiments applying H2O-adsorption in UHV to the surface of GaP(100) and InP(100) prepared by metalorganic vapour phase epitaxy (MOVPE). The influence of adsorbed water on III- and V-rich surfaces was examined with reflection anisotropy spectroscopy (RAS) and ultraviolet photoelectron spectroscopy (UPS). The two surface terminations show substantially different responses to H2O. A comparison to results for UHV-cleaved surfaces [3] tries to illuminate the role of hydrogen-termination for these MOVPE-prepared surfaces.
H. Döscher et al., ChemPhysChem 13: 2899 (2012); [2] B. Wood et al., The Journal of Chemical Physics 136: 064705 (2012); [3] O. Henrion et al., Surface Science 457: L337 (2000).