Regensburg 2013 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 21: Graphene - Electronic Properties and Transport 1 (jointly with DS, HL, MA, and O)

TT 21.8: Vortrag

Montag, 11. März 2013, 17:45–18:00, H17

The atomic and electronic structure of well-defined graphene nanoribbons studied by scanning probe microscopy — •Joost van der Lit¹, Mark Boneschanscher¹, Mari Iljas², Ari Harju², Andreas Uppstu², Daniel Vanmaekelbergh¹, Peter Liljeroth², and Ingmar Swart¹ — ¹Debye Institute for Nanomaterials Science, Utrecht University, The Netherlands — ²Department of Applied Physics, Aalto University, Finland

Recently, graphene nanostructures have gained a lot of interest since they introduce a bandgap in graphene, which is important for (opto-) electronics applications. Graphene nanoribbons can have a bandgap as large as 3 eV[1,2], which can be tuned by varying its width. By using a chemical bottom-up approach, we have synthesized graphene nanoribbons (GNR) on an Au(111) substrate[3]. By combining scanning tunneling microscopy (STM) and atomic force microscopy (AFM) with reactive and non-reactive tips, we can relate the electronic properties of the GNRs with their atomic structure. Furthermore, we can use the STM tip to (i) deliberately create well-defined atomic scale defects and (ii) control the interaction with the substrate. Hence, we are able to directly study the robustness of the properties of the graphene nanostructures. [1] P. Ruffieux, et al. , ACS Nano 6 (2012) 6930. [2]M. Koch, F. Ample, C. Joachim, L. Grill, Nat. Nanotechnol. 7 (2012)713. [3] J. Cai et al., Nature, 446 (2010) 470-473.