Regensburg 2013 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 31: Correlated Electrons: Low-Dimensional Systems -Materials 1
TT 31.6: Vortrag
Dienstag, 12. März 2013, 11:00–11:15, H41
High-mobility two-dimensional electron gas at a new oxide heterointerface — •Romain Giraud1, Joseph Dufouleur1, Yunzhong Chen2, Nini Pryds2, and Bernd Büchner1 — 1Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01171 Dresden, Germany — 2Department of Energy Conversion and Storage, Technical University of Denmark, Ris Campus, 4000 Roskilde, Denmark
In oxides heterostructures, it is generally accepted that the formation of a two-dimensional electron gas (2DEG) occurs at the interface between two insulators with different band gaps, due to band bending. However, there is still an ongoing debate about the mechanisms that drive charge transfer at the interface.
In this work, we evidence the formation of a 2DEG at a new oxide heterointerface, which will be presented in detail. The universality of the overlayer critical thickness for the onset of metallicity will be discussed, as well as the origin of charge transfer. A thorough analysis of the Shubnikov-de Haas oscillations observed above 1 T at T = 22 mK will be presented. These reveal the enhanced mobility of electrons and the influence of magnetic interactions on the 2DEG band structure. Due to a long a phase coherence length, this heterointerface offers a unique opportunity to study quantum coherent transport in strongly-correlated d-electron systems.