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TT: Fachverband Tiefe Temperaturen

TT 33: Topological Insulators 3 (jointly with HL, MA, and O)

TT 33.10: Vortrag

Mittwoch, 13. März 2013, 11:45–12:00, H16

Comparing scattering processes in topological insulators and giant Rashba semiconductors — •Peter Lemmens¹, Vladimir Gnezdilov², Dirk Wulferding¹, Patrik Recher³, Helmuth Berger⁴, Yoichi Ando⁵, Angela Möller⁶, R. Sankar⁷, and Fang-Cheng Chou⁷ — ¹IPKM, TU-BS, Braunschweig — ²ILTPE, Kharkov, Ukraine — ³IMAPH, TU-BS, Braunschweig — ⁴EPFL, Lausanne, Switzerland — ⁵ISIR, Osaka, Japan — ⁶Dept. of Chemistry, Univ. Houston, USA — ⁷CCMS, National Taiwan Univ., Taipei, Taiwan

Using Raman scattering experiments we probe scattering processes in BiTeI and topological insulators. In the former systems the surface termination, either by Iodine - Bi or Tellur - Bi determines the low energy scattering properties. A comparison of these surface induced signals with effects seen in topological insulators leads to a considerable gain of understanding of scattering mechanisms and the respective role of symmetry. Work supported by DFG, B-IGSM and NTH School for Contacts in Nanosystems.