Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 38: Correlated Electrons: Metal-Insulator Transition 1
TT 38.2: Vortrag
Mittwoch, 13. März 2013, 09:45–10:00, H20
Strongly Correlated Material under Voltage: The Electrical Breakdown in V2O3 at the Insulator to Metal Transition — •Stefan Guénon1, Sebastian Scharinger2, Siming Wang1, Juan Gabriel Ramírez1, Dieter Koelle2, Reinhold Kleiner2, and Ivan K. Schuller1 — 1Department of Physics and Center for Advanced Nanoscience, University of California San Diego — 2Physikalisches Institut and Center for Collective Quantum Phenomena and their Applications in LISA+, Universität Tübingen
We have investigated the electrical properties of a V2O3 thin film micro bridge. Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curves show hysteresis and a training effect, i.e. the subsequent IV loops are different from the first IV loop after thermal cycling. Low temperature scanning electron microscopy (LTSEM) reveals that the electrical breakdown over the whole device is caused by the formation of electro-thermal domains (ETDs), i.e. the current and temperature redistribution. On the contrary, at the nanoscale, the electrical breakdown causes the insulator to metal transition of individual domains. In a numerical model we considered these domains as a network of resistors and we were able to reproduce the electro-thermal breakdown as well as the hysteresis and the training effect in the IVs.
This work was supported by AFOSR grant number FA9550-12-1-0381.