Regensburg 2013 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 46: Graphene - SiC Substrates and Intercalation (jointly with DS, HL, MA, and O)
TT 46.1: Vortrag
Mittwoch, 13. März 2013, 16:00–16:15, H17
Molecular Doping of Epitaxial Graphene on SiC with flouro-fullerenes — •Martina Wanke1, 2, Anton Tadich3, Mark Edmonds4, Yaou Smets4, Chris Pakes4, and Thomas Seyller1, 2 — 1Institut für Physik, Technische Universität Chemnitz, Reichenhainer Strasse 70, 09126 Chemnitz, Germany — 2LS Technische Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen — 3Soft-X-Ray-Beamline, Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168, Australia — 4Scholl of Physics, La Trobe University, Physical Sciences 1, Bundoora, VIC 3086, Australia
Epitaxial graphene (EG) on SiC(0001) is intrinsically n-type doped due to charge transfer from the substrate surface [1,2]. Charge transfer doping with F4-TCNQ reduces the carrier concentration and increases the carrier mobility [2], but the stability of the molecular layer in ambient conditions is not given [2]. Molecules with a sufficiently high electron affinity are needed in order to achieve a significant reduction of the electron concentration in EG by surface transfer doping. The mechanism of surface transfer doping of diamond with C60F48 is well understood [3]. Using ARPES we investigated the surface transfer doping of EG with C60F48. A net p-type doping of EG was observed for higher coverages of the C60F48.
[1] T.Ohta et al., Science 313 (2006) 951; [2] J.Jobst et al., PRB 81 (2010) 195434; W.Chen et al., JACS 129 (2007) 10418; C. Coletti et al., PRB 81 (2010) 235401. [3] M. T. Edmonds et al., JCP 136 (2012) 124701.