Regensburg 2013 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 46: Graphene - SiC Substrates and Intercalation (jointly with DS, HL, MA, and O)

TT 46.10: Vortrag

Mittwoch, 13. März 2013, 18:15–18:30, H17

Intercalation as a route to atomically sharp graphene/ferromagnet interfaces: Structural and electronic investigations — •Philipp Leicht, Konstantin Krausert, Lukas Zielke, and Mikhail Fonin — Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany

The interface between graphene (G) and the substrate plays a vital role for the electronic properties of G. Apart from direct growth of G on a small number of substrates, a variety of metals can be intercalated between G and the substrate interface [1,2] and allow for the production of G on a large number of materials. In this work, we present the investigation of Ni intercalation underneath G on Ir(111). The atomic structure and electronic properties were investigated for samples with intercalated Ni ranging from a submonolayer to few monolayers.

For Ni intercalation underneath G/Ir(111), scanning tunneling microscopy shows strongly increased moiré corrugation as well as a decreased average distance of G/Ni/Ir(111) compared to G/Ir(111). The stronger corrugation is accompanied by considerable changes in the electronic structure of the G layer. The intercalation channels including the influence of defects and diffusion of intercalants within the graphene-metal interface are discussed for the two regimes of submonolayer and multilayer intercalation.

[1] M. Sicot et al. ACS Nano 6, 151 (2012) [2] L. Huang et al. Appl. Phys. Lett. 99, 163107 (2011)