Berlin 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

A: Fachverband Atomphysik

A 25: Poster: Electron scattering and recombination

A 25.2: Poster

Dienstag, 18. März 2014, 16:30–18:30, Spree-Palais

High resolution studies of resonant electron-ion recombination processes with an electron beam ion trap — •Stepan Dobrodey¹, Sven Bernitt¹, Chintan Shah², Holger Jörg², Stanislav Tashenov², and José Ramon Crespo López-Urrutia¹ — ¹Max-Planck-Institut für Kernphysik, Heidelberg, Germany — ²Physikalisches Institut, Ruprecht-Karls-Universität, Heidelberg, Germany

Dielectronic recombination (DR) is a resonant electron capture process where a free electron recombines with a highly charged ion (HCI) into an excited intermediate state, transfering its kinetic energy to a bound electron. This state subsequently decays by emission of a photon with a characteristic energy. Electron beam ion traps (EBIT) are convenient devices for investigating this process. They use a monoenergetic electron beam for the production and trapping of HCIs, and at the same time as a source of electrons for recombination. Krypton, with an atomic number of 36, shows a coupling which is intermediate between Russel-Saunders- and jj-Coupling, and therefore challenging for theoretical atomic models. Furthermore in recent years it has become clear that higher order processes, like trielectronic or quadruelectronic recombination, have also to be taken into account [1,2]. We present high resolution measurements of Kr²⁸⁺ up to Kr³⁴⁺ carried out at the FLASH-EBIT.
[1] Beilmann et al., Phys. Rev. Lett. 107, 143201 (2011)
[2] Beilmann et al., Phys. Rev. A 88, 062706 (2013)