Berlin 2014 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 51: Quantum information: Photons and nonclassical light III
Q 51.5: Vortrag
Donnerstag, 20. März 2014, 17:30–17:45, UDL HS3038
The electronic structure of the silicon vacancy color center in diamond — •Jonas Nils Becker1, Christian Hepp1, Tina Müller2, Victor Waselowski3, Benjamin Pingault2, Adam Gali4,5, Jeronimo Rios Maze3, Mete Atatüre2, and Christoph Becher1 — 1Universität des Saarlandes, Saarbrücken, Germany — 2Cavendish Laboratory, University of Cambridge, United Kingdom — 3Pontificia Universidad Catolica de Chile, Santiago, Chile — 4Budapest University of Technology and Economics, Budapest, Hungary — 5Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Budapest, Hungary
The negatively charged silicon vacancy (SiV) color center in diamond is a promising candidate for a solid state single photon source. However, the electronic structure of the defect has not been investigated in detail so far. We here examine the fluorescence spectra of single SiV centers fabricated by ion implantation in single crystalline bulk diamond as well as of an SiV ensemble in a low strain, CVD-grown, reference sample at cryogenic temperatures and in varying external magnetic fields. Additionally, we investigate the polarization properties of the four fine structure components in the spectra of single SiV centers at zero field. A comparison to simulated spectra and polarizations obtained from a group theoretical model shows a good agreement with the experimental data. Furthermore, we show that this model is capable to explain recently discovered spin selective excitation of the SiV center. The model can be extended to reproduce differences in spectra and polarizations for SiV centers in strained crystal environments such as nanodiamonds.