DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2014 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)

Wednesday, April 2, 2014, 15:00–16:30, CHE 89

15:00 DS 32.1 Towards selective ion beam modification of vanadium dioxide — •Jura Rensberg, Ronny Nawrodt, Sebastian Vatterodt, Jana Sommerfeld, Alexander von Müller, and Carsten Ronning
15:15 DS 32.2 Towards forming free switching in HfO2−x/TiN thin films grown by molecular beam epitaxy — •S Ulhas Sharath, Thomas Bertaud, Jose Kurian, Erwin Hildebrandt, Christian Walczyk, Pauline Calka, Peter Zaumseil, Malgorzata Sowinska, Damian Walczyk, Andrei Gloskovskii, Thomas Schroeder, and Lambert Alff
15:30 DS 32.3 Defects behavior in HfO2-based resistive switching devices — •Małgorzata Sowińska, Thomas Bertaud, Damian Walczyk, Andrei Gloskovskii, Pauline Calka, Lambert Alff, Christian Walczyk, and Thomas Schroeder
15:45 DS 32.4 Oxygen engineered HfO2−x as a CMOS compatible candidate for resistive switching — •Erwin Hildebrandt, S. U. Sharath, Jose Kurian, Mathis M. Mueller, Thomas Schroeder, Hans-Joachim Kleebe, and Lambert Alff
16:00 DS 32.5 Resistive switching of flash lamp crystallized YMnO3 thin films prepared on Pt/Ti/SiO2/Si substrates by low-temperature pulsed laser deposition — •Agnieszka Bogusz, Sławomir Prucnal, Wolfgang Skorupa, Daniel Blaschke, Barbara Abendroth, Hartmut Stöcker, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
16:15 DS 32.6 Resistive Switching in TiO2: Comparison of thermally oxidized and magnetron sputtered films — •Daniel Blaschke, Steffen Cornelius, Peter Zahn, Sibylle Gemming, Ilona Skorupa, Bernd Scheumann, Andrea Scholz, and Kay Potzger
100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden