Dresden 2014 – wissenschaftliches Programm
HL 13.6: Vortrag
Montag, 31. März 2014, 12:30–12:45, POT 251
Photoluminescence of Zn and Mn doped thick GaN layers — •Friederike Zimmermann1, Jan Beyer1, Frank Habel2, Gunnar Leibiger2, Berndt Weinert2, Martin Krupinski3, Patrick Hofmann3, and Johannes Heitmann1 — 1Institute of Applied Physics, TU Bergakademie Freiberg, Leipziger Str. 23, D-09599 Freiberg, Germany — 2Freiberger Compound Materials GmbH, Am Junger-Löwe-Schacht 5, D-09599 Freiberg, Germany — 3Namlab gGmbH, Nöthnitzer Straße 64, 01187 Dresden, Germany
Due to its superior electronic properties, GaN-based devices are suitable for high power, high frequency and high temperature applications. The direct and wide bandgap of GaN makes it an ideal material for bright UV and blue light emitting diodes and lasers. Electronic and optical properties can be tuned by doping with transition metal elements. We report on photoluminescence spectroscopy data of Zn and Mn doped samples grown by HVPE. Zn doped samples exhibit clear exitonic features including the exciton bound to the Zn acceptor. For samples of different Zn content four broad bands in the red, yellow, green and blue spectral region are found to vary in their relative intensities and temperature quenching. Mn doped samples show intense peaks at 1.25 and 1.41 eV which are assigned to intra-d-shell transitions of the incorporated Mn-ions. Sharp features in the exitonic range at room temperature can be ascribed to Raman scattering of the laser. As transition metals are generally expected to suppress the PL Raman contribution cannot be ruled out in Zn doped samples neither.