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Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 19: Nitrides: Devices

Monday, March 31, 2014, 15:00–17:15, POT 151

15:00 HL 19.1 Comparison of gallium nitride nanorod growth in MBE and MOVPE on nitridated c-plane sapphire — •Julian Stoever, Marc Sauerbrey, Stephan Figge, Jan Ingo Flege, Timo Aschenbrenner, Gerd Kunert, Jens Falta, and Detlef Hommel
15:15 HL 19.2 Light Emitters Based on GaN Nano-Stripes with Semipolar Quantum Wells — •Robert Anton Richard Leute, Junjun Wang, Tobias Meisch, Benjamin Neuschl, Klaus Thonke, and Ferdinand Scholz
15:30 HL 19.3 ( 1122 ) InGaN/GaN LEDs grown on 2" patterned sapphire substrates — •Tobias Meisch, Sabine Schörner, Junjun Wang, Klaus Thonke, and Ferdinand Scholz
15:45 HL 19.4 Al(Ga)N electron blocking heterostructure design for high injection efficient 290 nm light emitting diodes — •Martin Guttmann, Christoph Reich, Tim Kolbe, Frank Mehnke, Christian Kuhn, Jens Rass, Tim Wernicke, Mickael Lapeyrade, Sven Einfeldt, and Michael Kneissl
16:00 HL 19.5 Characteristics of sub-300 nm AlGaN multiple quantum well lasers grown on epitaxially laterally overgrown AlN/sapphire substrates — •Martin Martens, Peter Schneider, Frank Mehnke, Christian Kuhn, Christoph Reich, Viola Kueller, Arne Knauer, Carsten Netzel, Jens Rass, Tim Wernicke, Markus Weyers, and Michael Kneissl
16:15 HL 19.6 Sub-250 nm LEDs with enhanced charge carrier injection — •C. Kuhn, F. Mehnke, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, M. Weyers, and M. Kneissl
16:30 HL 19.7 Surface passivation studies of AlInN/GaN based HEMTs grown on Si(111) by MOVPE — •Jonas Hennig, Aqdas Fariza, Hartmut Witte, Juergen Blaesing, Armin Dadgar, and Alois Krost
16:45 HL 19.8 Defect characterisation in AlInN/AlN/GaN HEMT structures on Si(111) — •Aqdas Fariza, Hartmut Witte, Jonas Hennig, Oliver Krumm, Jürgen Bläsing, Armin Dadgar und Alois Krost
17:00 HL 19.9 A comparative study of V/Al/Ni/Au and Ti/Al/Ni/Au ohmic contacts on n-AlGaN/GaN — •Christopher Schröter, Alexander Schmid, Volker Klemm, and Johannes Heitmann
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