Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.20: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Simulating SiGe/Si Self-Assembled Quantum Dots — •Torsten Wendav1, Inga Fischer2, and Kurt Busch1,31Humboldt Universität zu Berlin, Institut für Physik, AG Theoretische Optik & Photonik, Berlin, Germany — 2Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany — 3Max-Born-Institut, Berlin, Germany

The integration of optoelectronic functionality into Silicon-based devices has been of interest for quite some time. However, this has proven to be difficult, mainly due to material properties of Silicon [1]. A promising approach to circumvent these difficulties is the integration of Germanium quantum dots into Silicon.

While it is easy to grow Germanium quantum dots on Silicon it is hard to experimentally tune their optoelectronic properties, largely due to the sheer amount of growth parameters [3].

In order to obtain a deeper understanding of the relationship between growth parameters and optoelectronic properties of Germanium quantum dots, numerical simulations were performed. Combing both experimental and numerical results leads to a consistent physical picture of SiGe/Si self-assembled quantum dots [4].

[1] R. A. Soref, Proceedings of the IEEE 81, 1687 (1993).
[2] Y.-H. Kuo, et al., Nature 437, 1334, 2005.
[3] M. Brehm, et al., J. Appl. Phys. 109, 123505-1, 2011.
[4] I. Fischer, et al., (In preparation).
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