Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 44: ZnO and its relatives: Devices

HL 44.4: Talk

Tuesday, April 1, 2014, 11:30–11:45, POT 151

Electrical characteristics of functionalized and bare ZnO nanowire Schottky diodes — •Alejandra Castro-Carranza, Stephanie Bley, Olesea Volciuc, Tobias Voss, and Jürgen Gutowski — Institute of Solid State Physics, University of Bremen, Bremen, Germany

Zinc oxide nanowires (ZnO NW) have shown to be promising nanoscale building blocks for optoelectronic applications due to their unique semiconductor, optical, piezoelectric, and chemical characteristics. An interesting approach to tailor the optoelectronic properties of ZnO nanostructures is to form hybrid assemblies with other materials. Previously, it has been shown that the photoluminescence (PL) spectrum of the ZnO NW arrays is modified when applying other materials, e.g. polymers and metals. This has been attributed to variations of the internal electric field and trap states at the interface. To gain further insight into these physical phenomena, we explore the electrical characteristics by means of Schottky diodes based on bare and coated ZnO NW arrays. Specifically, the internal electric field and charge carrier density of our devices are determined using capacitance-voltage characterization, the quality of the interfaces is examined using current-voltage characteristics, and the density of states is explored using capacitance-frequency characteristics.